Using KrF ELA to Improve Gate-Stacked LaAlO3/ZrO2 Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique-Reference-Cited by-同舟云学术

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Using KrF ELA to Improve Gate-Stacked LaAlO3/ZrO2 Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique

Published:2018-03-01 Issue:3 Volume:18 Page:1917-1921
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Wu Chien-Hung¹,Chang Kow-Ming²,Chen Yi-Ming²,Huang Bo-Wen²,Zhang Yu-Xin²,Wang Shui-Jinn³

Affiliation:

1. Department of Electronics Engineering, Chung Hua University, Hsinchu, Taiwan, 300, R.O.C

2. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, 300, R.O.C

3. Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, 701, R.O.C

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of low indium composition ratio on sol–gel solution-deposited amorphous zinc oxide thin film transistors;Journal of Materials Science: Materials in Electronics;2020-06-09

2. Recent Progress in Photonic Processing of Metal‐Oxide Transistors;Advanced Functional Materials;2019-10-22

3. An examination of correlation between characteristic and device performance of ZnO films as a function of La content;Vacuum;2018-11

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