Characterization of Mn-Based Self-Forming Barriers on Low-k Samples With or Without UV Curing Treatment
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Published:2015-10-01
Issue:10
Volume:15
Page:7493-7497
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ISSN:1533-4880
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Container-title:Journal of Nanoscience and Nanotechnology
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language:en
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Short-container-title:j nanosci nanotechnol
Author:
Park Jae-Hyung,Kang Min-Soo,Han Dong-Suk,Choi Duck-Kyun,Park Jong-Wan
Abstract
In the present work, we report a Cu–Mn alloy as a material for the self-forming barrier process, and we investigated the diffusion barrier properties of the self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films with 3.8 at% Mn were directly
deposited onto low-k dielectrics by co-sputtering followed by annealing at various temperatures. The self-formed layers were investigated by transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS). In order to compare barrier properties between the Mn-based self-formed
layer on low-k dielectric with UV curing and the interlayer on low-k dielectric without UV curing, thermal stability was measured at various thermal stress temperatures. Our results indicated that the formation of the barrier at the interface of Cu–Mn alloy/low-k dielectric was enhanced
by UV curing due to changes in the porosity and C concentration in the dielectric layer.
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering
Cited by
1 articles.
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