Effects of Low Temperature Anneal on the Interface Properties of Thermal Silicon Oxide for Silicon Surface Passivation-Reference-Cited by-同舟云学术

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Effects of Low Temperature Anneal on the Interface Properties of Thermal Silicon Oxide for Silicon Surface Passivation

Published:2016-05-01 Issue:5 Volume:16 Page:4783-4787
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Balaji Nagarajan,Park Cheolmin,Chung Sungyoun,Ju Minkyu,Raja Jayapal,Yi Junsin

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes;IEEE Transactions on Device and Materials Reliability;2024-06

2. DC-free Method to Evaluate Nanoscale Equivalent Oxide Thickness: Dark-Mode Scanning Capacitance Microscopy;Nanomaterials;2024-05-26

3. Parasitic Surface Conduction Effect of TSV on Interconnection Performance in RF SOI for 2.5D Integration;2023 IEEE 25th Electronics Packaging Technology Conference (EPTC);2023-12-05

4. A DLTS study on Deep Trench Processing induced Trap States in Silicon Photodiodes;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08

5. Investigating the effect of aluminum oxide fixed charge on Schottky barrier height in molybdenum oxide-based selective contacts;Solar Energy Materials and Solar Cells;2023-10

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