Improved Thin-Film Transistor Performance of Low-Temperature, Solution-Processed Indium Oxide by Controlling Solution Temperature
Author:
Affiliation:
1. Internet of Things Convergence Research Department, Electronics and Telecommunications Research Institute, Daejeon, 34129, Korea
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Gas sensor based on indium trioxide nanostructures in review;3RD INTERNATIONAL CONFERENCE ON ENERGY AND POWER, ICEP2021;2022
2. Preparation of nano indium oxide for optoelectronics application;2ND INTERNATIONAL CONFERENCE ON MATERIALS ENGINEERING & SCIENCE (IConMEAS 2019);2020
3. A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics;Advanced Functional Materials;2019-09-06
4. Significant Performance Improvement of Solution-Processed Metal Oxide Transistors by Ligand Dissociation through Coupled Temperature–Time Treatment of Aqueous Precursors;ACS Applied Electronic Materials;2019-03-07
5. Raman spectroscopy study of solution-processed In2O3 thin films: effect of annealing temperature on the characteristics of In2O3 semiconductors and thin-film transistors;Molecular Crystals and Liquid Crystals;2019-01-22
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