The Bilayer Structure for Low-Temperature, Solution-Processed Indium Zinc Oxide Thin-Film Transistors-Reference-Cited by-同舟云学术

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The Bilayer Structure for Low-Temperature, Solution-Processed Indium Zinc Oxide Thin-Film Transistors

Published:2016-08-01 Issue:8 Volume:16 Page:8692-8695
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Oh Yeon-Wha¹,Kang Chan-Mo¹,Ryu Jin Hwa¹,Kim Hoon¹,Baek Kyu-Ha¹,Lee Ga-Won²,Lee Sanggeun³,Seo Geumseok³,Kim Hongdoo⁴,Do Lee-Mi¹

Affiliation:

1. Internet of Things Convergence Research Department, Electronics and Telecommunications Research Institute, Daejeon, 305-700, Korea

2. Department of Electronic Engineering, Chungnam National University, Daejeon, 305-765, Korea

3. Philo Stone Co., Ltd., Busan, 619-691, Korea

4. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, 446-701, Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics;Advanced Functional Materials;2019-09-06

2. Film Density Controlled-InGaZnO Multi-Stacked Channel Based Thin-Film Transistors Using a Solution Process;Science of Advanced Materials;2017-09-01

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