Film Density Controlled-InGaZnO Multi-Stacked Channel Based Thin-Film Transistors Using a Solution Process-Reference-Cited by-同舟云学术

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Film Density Controlled-InGaZnO Multi-Stacked Channel Based Thin-Film Transistors Using a Solution Process

Published:2017-09-01 Issue:9 Volume:9 Page:1578-1582
ISSN:1947-2935
Container-title:Science of Advanced Materials
language:en
Short-container-title:sci adv mater

Author:

Rim You Seung,Keum Min-Jong,Baek Yongmin,Lee Byung Moo,Kim Kyung Hwan

Publisher

American Scientific Publishers

Subject

General Materials Science

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved electrical properties of laser annealed In and Ga co-doped ZnO thin films for transparent conducting oxide applications;Ceramics International;2019-12

2. The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay);Coatings;2019-07-05

3. Sol-gel processed high-k aluminum oxide dielectric films for fully solution-processed low-voltage thin-film transistors;Ceramics International;2018-06

4. Study on Band Structure and Spectrum of MgxZn1–xO Based on First Principles;Journal of Nanoelectronics and Optoelectronics;2018-05-01

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