Design Optimization of InAs-Based Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (TFET)-Reference-Cited by-同舟云学术

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Design Optimization of InAs-Based Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (TFET)

Published:2016-10-01 Issue:10 Volume:16 Page:10199-10203
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Seo Jae Hwa,Yoon Young Jun,Jo Young-Woo,Son Dong-Hyeok,Cho Seongjae,Kwon Hyuck-In,Lee Jung-Hee,Kang In Man

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel recessed-source negative capacitance gate-all-around tunneling field effect transistor for low-power applications;Microelectronics Journal;2024-03

2. Tapered-Shape Channel Engineering for Suppression of Ambipolar Current in TFET;2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM);2020-10-23

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