COMPARATIVE X-RAY DIFFRACTOMETRY OF THE DEFECT STRUCTURE OF ZnO EPITAXIAL FILMS DEPOSITED BY MAGNETRON SPUTTERING ON C-PLANE Al2O3 SUBSTRATES IN INHOMOGENEOUS ELECTRIC FIELD-Reference-Cited by-同舟云学术

COMPARATIVE X-RAY DIFFRACTOMETRY OF THE DEFECT STRUCTURE OF ZnO EPITAXIAL FILMS DEPOSITED BY MAGNETRON SPUTTERING ON C-PLANE Al2O3 SUBSTRATES IN INHOMOGENEOUS ELECTRIC FIELD

Published:2023-03-01 Issue:2 Volume:68 Page:180-188
ISSN:0023-4761
Container-title:Кристаллография
language:
Short-container-title:Kristallografiâ

Author:

Volkovsky Yu. A.¹,Zhernova V. A.¹,Folomeshkin M. S.²³,Prosekov P. A.¹,Muslimov A. E.¹,Butashin A. V.¹,Ismailov A. M.⁴,Grigoriev Yu/ V.¹,Pisarevsky Yu. V.¹,Kanevsky V. M.¹⁵

Affiliation:

1. Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”Russian Academy of Sciences, Moscow, 119333 Russia

2. National Research Centre “Kurchatov Institute”, 123182, Moscow, Russia

3. Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, 119333, Moscow, Russia

4. Dagestan State University, Makhachkala, Republic of Dagestan, 36700 Russia

5. National Research Centre “Kurchatov Institute,” Moscow, 123182 Russia

Abstract

The results of studying the specific features of the growth of zinc oxide films formed on sapphire substrates by magnetron sputtering in an inhomogeneous electric field are presented. The films have been analyzed by high-resolution X-ray diffractometry, pole figure technique, and electron microscopy. A sequence of changes in the lateral structure with an increase in the film thickness, which depends also on the local potential, is revealed. Thus, regions with a higher surface potential correspond to the ZnOá10 0ñ(0001)||Al2O3á11 0ñ(0001) epitaxial ratio with the least lattice mismatch.

Publisher

The Russian Academy of Sciences

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