Impact Of Oxygen Diffusion On The Performance Of HfO2/GaAs Metal-oxide-semiconductor Field-effect-transistors-Reference-Cited by-同舟云学术

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Impact Of Oxygen Diffusion On The Performance Of HfO2/GaAs Metal-oxide-semiconductor Field-effect-transistors

Published:2016-02-01 Issue:2 Volume:7 Page:123-129
ISSN:0976-397X
Container-title:Advanced Materials Letters
language:en
Short-container-title:Adv. Mater. Lett.

Author:

Das Anindita,Chattopadhyay Sanatan,Kumar Dalapati Goutam

Publisher

International Association of Advanced Materials

Subject

General Materials Science

Link

http://aml.iaamonline.org/article_14802_15a994579d2d2cc7f6c786c8f5090762.pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications;Nanomaterials;2022-12-06

2. Enhanced room temperature sensitivity of undoped HfO2 nanoparticles towards formaldehyde gas;Applied Physics A;2021-11-11

3. Radiation tolerance, charge trapping, and defect dynamics studies of ALD-grown Al/HfO2/Si nMOSCAPs;Journal of Materials Science: Materials in Electronics;2020-01-16

4. Ion induced intermixing and consequent effects on the leakage currents in HfO2/SiO2/Si systems;Applied Physics A;2017-04-04

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