Radiometric and noise characteristics of InAs-rich T2SL MWIR pin photodiodes
Author:
Publisher
European Optical Society
Subject
Atomic and Molecular Physics, and Optics
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Modelling metastructures for quantum efficiency enhancement in long-wavelength infrared InAs/GaSb type-II superlattice detectors: A case study;Infrared Physics & Technology;2023-12
2. Temperature Dependence Study of Electrical and Electro-Optical Performances of Midwave Infrared Ga-Free T2SL Barrier Photodetector;Applied Sciences;2022-10-14
3. Influence of Pixel Etching on Electrical and Electro-Optical Performances of a Ga-Free InAs/InAsSb T2SL Barrier Photodetector for Mid-Wave Infrared Imaging;Photonics;2021-05-30
4. Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics;Journal of Physics D: Applied Physics;2018-01-10
5. Influence of the p-type doping on the radiometric performances of MWIR InAs/GaSb superlattice photodiodes;Infrared Physics & Technology;2015-05
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