Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample-Reference-Cited by-同舟云学术

Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample

Published:2012-06-26 Issue:4 Volume:15 Page:530-535
ISSN:1980-5373
Container-title:Materials Research
language:
Short-container-title:Mat. Res.

Author:

Viana Emilson Ribeiro¹,Ribeiro Geraldo Mathias¹,Oliveira Alfredo Gontijo de¹,Peres Marcelos Lima²,Rubinger Rero Marques²,Rubinger Carla Patrícia Lacerda²

Affiliation:

1. Universidade Federal de Minas Gerais, Brasil

2. Universidade Federal de Itajubá, Brasil

Publisher

FapUNIFESP (SciELO)

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://www.scielo.br/pdf/mr/v15n4/aop_1001-11.pdf

Reference28 articles.

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3. Recent experimental studies of electron dephasing in metal and semiconductor mesoscopic structures;Lin JJ;Journal of Physics,2002

4. Interaction effects in disordered fermi systems in two dimensions;Altshuler BL;Physical Review Letters,1980

5. Possible explanation of nonlinear conductivity in thin-film metal wires;Anderson PW;Physical Review Letters,1979

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