Theoretical study of c-GaN/GaAs single heterojunction solar cells

Author:

Cruz Ana Gabriela Galicia1,Solís Mario Díaz1,González Leandro García1,Torres Julián Hernández1,López Máximo López2,Puente Gerardo Contreras3,Rodríguez Guillermo Santana4,Peredo Luis Zamora1

Affiliation:

1. Universidad Veracruzana, Mexico

2. Centro de Investigación y de Estudios Avanzados del IPN, Mexico

3. Escuela Superior de Física y Matemáticas del IPN, Mexico

4. Universidad Nacional Autónoma de México, Mexico

Publisher

FapUNIFESP (SciELO)

Subject

General Physics and Astronomy,General Materials Science,General Chemistry

Reference24 articles.

1. Gallium nitride nanostructures for light-emitting diode applications;KANG M.S.;Nano Energy,2012

2. Properties of GaN and related compounds studied by means of Raman scattering;HARIMA H.;Journal of Physics Condensed Matter,2002

3. InGaN solar cells: Present state of the art and important challenges;BHUIYAN A.G.;IEEE Journal of Photovoltaics,2012

4. Towards the identification of the dominant donor in GaN;PERLIN P.;Physical Review Letters,1995

5. Substrates for gallium nitride epitaxy;LIU L.;Materials Science and Engineering R,2002

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