Numerical Simulation of p-i-n GaAs Photovoltaic Cell Using SCAPS-1D

Abstract

The operation of solar cells based on GaAs p-i-n GaAs is investigated via numerical simulation using "SCAPS-1D. This involves optimizing certain physical and geometric parameters of these cells to increase their performance under standard conditions. The simulation was carried out on a "p-i-n" solar cell based on GaAs by studying several parameters, namely; the effect of the thickness of each layer of the PV cell, the impact of doping on the values of the open-circuit voltage (Voc) and short-circuit current density (Jsc), as well as conversion efficiency and fill factor (FF). The obtained results show that the behavior of the solar cells studied is directly related to the temperature and to the thickness of the intrinsic layers. In fact, the optimal parameters for high performance are: Voc= 0.85 V, Jsc= 24.52 mA/cm2, FF= 85,70 % and ƞ=21.05 %.