Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure
Author:
Publisher
FapUNIFESP (SciELO)
Subject
General Physics and Astronomy
Link
http://www.scielo.br/pdf/bjp/v36n3b/a17v363b.pdf
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Pressure, temperature and electric field effects on the photoionization cross section in a multilayered spherical quantum dot;The European Physical Journal Plus;2022-11-15
2. Tunability of the optical absorption and refractive index changes in step-like and parabolic quantum wells under external electric field;Optik;2018-09
3. High-pressure effects on the intersubband optical absorption coefficient and relative refractive index change in an asymmetric double δ-doped GaAs quantum well;physica status solidi (b);2015-03-26
4. Electronic structure computation and differential capacitance profile in δ-doped FET as a function of hydrostatic pressure;AIP Conference Proceedings;2014
5. Nonlinear intersubband absorption and refractive index changes in square and graded quantum well modulated by temperature and Hydrostatic pressure;Journal of Luminescence;2013-02
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