High-pressure effects on the intersubband optical absorption coefficient and relative refractive index change in an asymmetric double δ-doped GaAs quantum well-Reference-Cited by-同舟云学术

High-pressure effects on the intersubband optical absorption coefficient and relative refractive index change in an asymmetric double δ-doped GaAs quantum well

Published:2015-03-26 Issue:4 Volume:252 Page:683-688
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Rodríguez-Magdaleno K. A.¹²,Martínez-Orozco J. C.²³,Rodríguez-Vargas I.²,Mora-Ramos M. E.¹,Duque C. A.³

Affiliation:

1. Facultad de Ciencias, Universidad Autónoma del Estado de Morels; Av. Universidad 1001, CP 62209, Cuernavaca; Morelos México

2. Unidad Académica de Física, Universidad Autónoma de Zacatecas; Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060; Zacatecas, Zac. México

3. Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales; Universidad de Antioquia UdeA, Calle 70 No. 52-21; Medellín Colombia

Funder

Mexican National Council of Science and Technology

Estancias Postdoctorales y Sabáticas al Extranjero para la consolidación de Grupos de Investigación

Autonomous University of Zacatecas

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201451444/fullpdf

Reference34 articles.

1. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs