Silicon Nanostructuring Using SF6/O2 Downstram Plasma Etching: Morphological, Optical and Sensing Properties
Author:
Affiliation:
1. Atomic Energy Commission of Syria, Syria
Publisher
FapUNIFESP (SciELO)
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
http://www.scielo.br/pdf/mr/v21n5/1516-1439-mr-21-05-e20171082.pdf
Reference25 articles.
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3. Femtosecond laser-induced formation of spikes on silicon;Her TH;Applied Physics A,2000
4. Elemental evolution of the SiOxFy self-masking layer of plasma textured silicon and its modification during air exposure;Gaudig M;Journal of Applied Physics,2017
5. The black silicon method a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control;Jansen H;Journal of Micromechanics and Microengineering,1995
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