Nanocrystalline GaN and GaN: H films grown by RF-magnetron sputtering-Reference-Cited by-同舟云学术

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Nanocrystalline GaN and GaN: H films grown by RF-magnetron sputtering

Published:2006-09 Issue:3b Volume:36 Page:978-981
ISSN:0103-9733
Container-title:Brazilian Journal of Physics
language:en
Short-container-title:Braz. J. Phys.

Author:

Leite D. M. G.,Pereira A. L. J.,Silva L. F. da,Silva J. H. Dias da

Publisher

FapUNIFESP (SciELO)

Subject

General Physics and Astronomy

Link

http://www.scielo.br/pdf/bjp/v36n3b/a47v363b.pdf

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure Limit;Materials Research;2022

2. Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources;ACS Omega;2020-10-08

3. Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells;Journal of Materials Chemistry A;2019

4. Growth and characterization of GaN thin film on Si substrate by thermionic vacuum arc (TVA);Materials Research Express;2017-01-30

5. LEDs Based on Heteroepitaxial GaN on Si Substrates;Topics in Applied Physics;2017

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