Author:
Gagliardi M-A.,Nenonen S.,Gagliardi T.,Hjelt K. T.,Juvonen M.,Tuomi T.,Bavdaz M.
Abstract
AbstractThe electrical and charge collection properties of a semiconductor detector play an important role in a spectrometer's final performance. However, the studies of these properties often concentrate on only a few samples. In this work over 100 CdZnTe detectors from 12 different growth boules were characterized with one of the following test methods. The composition uniformity was evaluated with low temperature photoluminescence (PL) measurements. From the current-voltage characteristics the differences in CdZnTe detector resistivities were investigated. Charge collection properties, μτ-products, and energy resolutions were characterized with spectroscopic methods using an alpha and isotopic sources. A wide selection of test results are presented indicating the variety of CdZnTe material.
Publisher
Springer Science and Business Media LLC
Cited by
7 articles.
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1. Progress in compound semiconductors;SPIE Proceedings;2003-03-10
2. The X-ray response of CdZnTe;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2002-05
3. The hard X-ray response of HgI2;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2002-03
4. Development of compound semiconductor arrays for x- and gamma-ray spectroscopy;SPIE Proceedings;2001-12-18
5. High resolution x-ray spectroscopy using GaAs arrays;Journal of Applied Physics;2001-11-15