Molecular Beam Epitaxial Growth of Cdl-xznxTe Matched to HgCdTe Alloys-Reference-Cited by-同舟云学术

Molecular Beam Epitaxial Growth of Cdl-xznxTe Matched to HgCdTe Alloys

Published:1986 Issue: Volume:90 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Magnea N.,Dal'bo F.,Pautrat J. L.,Million A.,Cioccio L. Di,Feuillet G.

Abstract

ABSTRACTCD1−xZnxTe alloys of various composition have been grown by the Molecular Beam Epitaxy Technique and characterized by Transmission Electron Microscopy. C(V) measurements and photoluminescence spectroscopy techniques. The quality of the thick layers is comparable to that of bulk material. Thin strained layers have also been grown whose interfaces are structurally good. The recombination within a CdTe well confined between Cd1−xZnxTe barriers is dominated by intrinsic processes.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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