Visualization of electrons and holes localized in the gate thin film of metal-oxide nitride-oxide semiconductor type flash memory by using scanning nonlinear dielectric microscopy

Abstract

ABSTRACTWe used scanning nonlinear dielectric microscopy to observe the position of electrons and holes in the gate SiO2-Si3N4-SiO2 (ONO) film of metal-oxide-nitride-oxide semiconductor type Flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film.