Author:
Guegan Georges,Gwoziecki Romain,Gonnard Olivier,Gouget Gilles,Raynaud Christine,Casse Mikael,Deleonibus Simon
Abstract
AbstractThe temperature rise in SOI has been measured on two successive generations. This work shows that self-heating effects become less and less severe with both MOSFET and power supply voltage scaling.
Publisher
Springer Science and Business Media LLC
Reference6 articles.
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2 articles.
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