Slant-Scanning and Interstice-Bridging Applied to ZMR to Improve the Quality of Recrystallized Si Films on Quartz

Abstract

AbstractCMOS test circuit chips have been fabricated for the purpose of evaluating Si film recrystallized on quartz wafers by using a graphite-strip heater oven equipped with a micro-computer feedback system. Two new methods have been applied to the zone-melting recrystallization technique to produce a highly uniform and grain boundary (GB) free recrystallized Si film. The slant-scanning method was used to control the GB's location in recrystallized Si film of 180μm wide stripes separated by 20μm. The intersticebridging method was used to reduce the (111) texture generation to less than 1%. The average electron mobility and the average threshold voltage for MOSFET's were 960cm2/V sec, with a standard deviation of 43cm2/V sec, and 1.38V with a standard deviation of 0.25V, respectively. For the ring oscillator, at a supply voltage of 12V, the propagation delay time was 1.7nsec per stage. The maximum response frequency was higher than IMHz for the CMOS inverters.