Author:
Soda K. J.,Dejule R. Y.,Streetman B. G.
Abstract
ABSTRACTIt is demonstrated that swept-line electron beam (SLEB) annealing can be successfully employed to recrystallize relatively deep (∼0.5 μm) Si-implanted amorphous silicon layers. DLTS and C-V analysis of these layers show significant reductions in concentration of residual defects and magnitude of dopant redistribution effects. For comparison, similar data for furnace annealed material is also presented.
Publisher
Springer Science and Business Media LLC