Defect annealing in phosphorus implanted silicon: A D.L.T.S. study

Author:

Krynicki J.,Bourgoin J. C.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,General Engineering

Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. TCAD simulation of electrical characteristics of silicon tunnel junctions for monolithically integrated silicon/perovskite tandem solar cells;INTERNATIONAL CONFERENCE ON SUSTAINABLE MATERIALS SCIENCE, STRUCTURES, AND MANUFACTURING;2023

2. Radiation Defects and Annealing Study on PNP Bipolar Junction Transistors Irradiated by 3-MeV Protons;IEEE Transactions on Nuclear Science;2015-12

3. Room Temperature Photoluminescence Characterization of Low Dose As+ Implanted Si after Rapid Thermal Annealing;ECS Solid State Letters;2015-05-23

4. Residual defects in low-dose arsenic-implanted silicon after high-temperature annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-02

5. Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions;Radiation Effects and Defects in Solids;1989-10

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