Defect Centers in Boron‐Implanted Silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1659853
Reference21 articles.
1. Electrical and physical measurements on silicon implanted with channelled and nonchanneled dopant ions
2. Electrical Behavior of Group III and V Implanted Dopants in Silicon
3. POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICON
4. The isothermal annealing of boron implanted silicon
5. On the annealing of damage produced by boron ion implantation of silicon single crystals
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1. Profiles and annealing of thermally generated electron traps in boron‐implanted phosphorus‐doped silicon;Journal of Applied Physics;1986-01-15
2. Thermally generated electron traps in boron‐implanted, phosphorus‐doped silicon;Journal of Applied Physics;1985-09-15
3. Defects in pulsed laser and thermal processed ion implanted silicon;Applied Physics A Solids and Surfaces;1984-05
4. Deep‐level traps in low‐dose boron‐implanted and low‐temperature annealed silicon;Applied Physics Letters;1980-10-15
5. Energy Levels in Silicon;Annual Review of Materials Science;1980-08
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