Author:
Schultz Allan E.,Chang Y. Austin
Abstract
AbstractExtensive new data and modeling in the In-Ga-As system has allowed the authors to reexamine the phase equilibria between the melt and the epitaxial solid. A detailed thermodynamic model was constructed with the following improvements: (1) The solid-solid interaction parameters were based on InAs-GaAs miscibility gap data, and (2) liquid-bulk solid, as well as liquid-epitaxial solid, tie-lines were used. Comparison of tie- lines from epitaxial systems and bulk systems demonstrated that strain energy is not the dominant factor in equilibrium growth of epitaxial solid films of In1-xGaxAs on any Ill-V binary substrate. Both the “lattice- pulling” effect and the “substrate-orientation” effect were shown to be caused by different quaternary equilibria at the In1-xGaxAs/InP interface, and not by film-substrate strain.
Publisher
Springer Science and Business Media LLC
Reference13 articles.
1. 10. Ding J. , Washburn J. , Sands T. , Keramidas V.G. , Appl. Phys. Lett.
2. 9. Schultz A.E. , The Relationship between (Ga.In)As and its Melt for the the Bulk and Thin Film Cases, PhD Thesis, University of Wisconsin-Madison, 1988
3. Direct LPE Growth of InP on (111)A Oriented In0.53Ga0.47As without Dissolution
4. Growth and characterization of lattice‐matched epitaxial films of GaxIn1−xAs/InP by liquid‐phase epitaxy
5. Liquidus‐Solidus Isotherms in the In‐Ga‐As System