Growth and characterization of lattice‐matched epitaxial films of GaxIn1−xAs/InP by liquid‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323399
Reference11 articles.
1. Zero material dispersion in optical fibres
2. Growth and Characterization of InP-lnGaAsP Lattice-Matched Heterojunctions
3. Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m
4. Efficient 1.06-µm emission from InxGa1-xAs electroluminescent diodes
5. Phase diagram, crystal growth, and band structure of InxGa1-xAs
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