Self-Assembled Iii-Phospide Quantum Dots Grown by Metalorganic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Self-Assembled Iii-Phospide Quantum Dots Grown by Metalorganic Chemical Vapor Deposition

Published:1999 Issue: Volume:583 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Ryou Jae-Hyun,Chowdhury Uttiya,Dupuis Russell D.,Reddy Chavva V.,Narayanamurti Venkatesh,Mathes David T.,Hull Robert

Abstract

AbstractWe report InP self-assembled quantum dots embedded in In0.51Al0.49P grown by metalorganic chemical vapor deposition. Growth parameters are altered to study the InP quantum-dot growth characteristics under various growth conditions. Quantum-dot morphology is characterized using atomic-force microscopy. Also, photoluminescence studies of the light-emitting properties are performed. Direct-bandgap ternary InxAlI−xP (x=˜0.7, ˜0.85) self-assembled quantum dots are also grown and compared with InP quantum dots.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference8 articles.

1. Low threshold quantum dot injection laser emitting at 1.9 [micro sign]m

2. Multidimensional quantum well laser and temperature dependence of its threshold current

3. Growth of self-assembled InAs and InAsxP1−x dots on InP by metalorganic vapour phase epitaxy

4. Phänomenologische Theorie der Kristallabscheidung an Oberflächen. I

5. InAs quantum dots in InAlAs matrix on (001)InP substrates grown by molecular beam epitaxy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved area density and luminescence properties of InP quantum dots grown on In0.5Al0.5P by metal-organic chemical vapor deposition;Journal of Electronic Materials;2003-11

2. Effect of Si delta doping on the luminescence properties of InP/InAlP quantum dots;Applied Physics Letters;2003-06-16