Low threshold quantum dot injection laser emitting at 1.9 [micro sign]m-Reference-Cited by-同舟云学术

Low threshold quantum dot injection laser emitting at 1.9 [micro sign]m

Published:1998 Issue:7 Volume:34 Page:670
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Ustinov V.M.,Zhukov A.E.,Egorov A.Yu.,Kovsh A.R.,Zaitsev S.V.,Gordeev N.Yu.,Kopchatov V.I.,Ledentsov N.N.,Tsatsul'nikov A.F.,Volovik B.V.,Kop'ev P.S.,Alferov Z.I.,Ruvimov S.S.,Liliental-Weber Z.,Bimberg D.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19980373?crawler=true&mimetype=application/pdf

Reference9 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Low threshold, large To injection laser emission from (InGa)As quantum dots

3. Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers

4. Room temperature lasing from InGaAs quantum dots

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