Energy losses of ions implanted in matter

Author:

Liang J. H.,Liao K. Y.

Abstract

A set of simple and accurate formulae for the first four moments of nuclear and electronic energy losses is proposed. A new variable is introduced to include the finite maximum-impact-parameter effect in the nuclear stopping process, which is assumed to be infinite in most studies. A critical energy at which the electronic energy loss is equal to the nuclear energy loss is also defined. It determines whether the nuclear or the electronic stopping process is the dominant mechanism in terms of incident-ion energy. The critical energy increases for heavy ions implanted in heavy target materials during the first moment of energy loss. The second moment of electronic energy loss is important only for light ions implanted at high ion energies. The third and fourth moments of nuclear energy loss are much larger than those of the electronic energy loss for all ion-target combinations. Theoretical predications of the projected ranges and range stragglings for gold ions implanted in carbon films are close to the experimental data when these proposed four moments of nuclear and electronic energy losses are considered.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Modulation of lattice strain in ZnO thin films by ion implantation;Materials Letters;2022-05

2. Ion induced controlled modifications in structural and optical properties of indium oxide thin films - studies with 25-keV Co− and N+ beam implantations;Surface and Interface Analysis;2017-05-12

3. Higher moments of the implanted-ion profiles of bismuth in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-06

4. A Study of Longitudinal and Transversal Range Parameters of Ion-Implanted 40–360 keV Molybdenum in Silicon;Japanese Journal of Applied Physics;1999-01-15

5. Analysis of depth profiles of implanted lead ions in silicon;Applied Physics A: Materials Science & Processing;1998-09-01

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