Abstract
SiO2 films, formed by spin coating acid-catalyzed TEOS-based sol-gel on Si substrates, were annealed at 300–1000 °C and analyzed using ellipsometry, FTIR, and in situ stress measurements. Film porosity ranged from an average of 28% before annealing to 7% after annealing 3 h at 1000 °C. Below ≍800 °C, water and silanol removal caused a decrease in refractive index and increase in the in-plane tensile stress. Infrared spectra indicated compressive strain normal to the plane, however. Above ≍800 °C, further densification and structural relaxation occurred. Exposure to H2O also caused relaxation after annealing, as the most compressed Si–O–Si units reacted preferentially with moisture.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
54 articles.
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