Characteristics of the Blocking Layers in the a-Si:H Photoreceptor

Abstract

AbstractThe effects of characteristics of the blocking layers in multilayered a-Si:H photoreceptors on electrophotographic properties are reported. The structure of the photoreceptor is Al/a-Si:H(p)/a-Si:H(i)/a-Si1−xCx. The thickness and boron doping ratio of the bottom p-type layer and the thickness and compositional fraction x of the surface a-Si1−xCx layer are varied. It is shown that the dark decay time is particularly sensitive to the thickness and doping ratio of the p-type layer. These dependences are discussed assuming a space charge layer in the p-type layer. It is also shown that the thickness and x of the a-Si1−xCx layer greatly influence the residual voltage and effective quantum efficiency of photocarrier generation.