Reverse‐bias current‐electric field characteristics of amorphous silicon films with blocking layers: Thickness dependence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97207
Reference12 articles.
1. Dark current transport mechanism ofp‐i‐nhydrogenated amorphous silicon diodes
2. Physics of amorphous silicon alloyp‐i‐nsolar cells
3. Photoconductivity and electronic doping effects in hydrogenated amorphous silicon
4. Fabrication of a New Multilayered Amorphous Silicon Photoreceptor Drum by Glow Discharge Method
5. Field‐effect phenomena in hydrogenated amorphous silicon photoreceptors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Volume-expansion-induced lattice instability and solid-state amorphization;Physical Review B;1996-01-01
2. Molecular-Dynamics Study of Crystal-to-Amorphous Phase Transformation;Computer Aided Innovation of New Materials II;1993
3. Dark discharge in hydrogenated amorphous silicon photoreceptors;Journal of Applied Physics;1987-09
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