Evidence of Oscillating Oxide Growth Mechanism during Oxygen Plasma Oxidation of Silicon-Reference-Cited by-同舟云学术

Evidence of Oscillating Oxide Growth Mechanism during Oxygen Plasma Oxidation of Silicon

Published:1991 Issue: Volume:223 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Nguyen Son,Nguyen Tue,Dobuzinsky D.,Gleason R.,Gibson M.

Abstract

ABSTRACTEvidence of an oscillating thin-film oxide growth reaction was observed on silicon surfaces during low RF power (13.6 MHz, < I W/cm2) plasma oxidation. Ex-situ ellipsometric, X-ray photoelectron (XPS) and Fourier-transform infrared (FTIR) spectroscopic measurements show that the oscillating growth layer is silicon-rich oxide and its oscillating thickness is very sensitive to both surface preparation and plasma oxidation conditions. A simple low-energy oxygen ion-assisted plasma oxidation and sputtering mechanism is proposed to clarify and to account for the observed oscillating oxide growth reaction.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference8 articles.

1. Plasma-assisted chemical vapor deposition and characterization of high quality silicon oxide films

2. Initial stages of the interaction of nitrous oxide and oxygen with the (100) silicon surface under low pressures

3. Low Temperature Oxidation of Silicon in a Microwave‐Discharged Oxygen Plasma

4. Oxidation of silicon in an electron cyclotron resonance oxygen plasma: Kinetics, physicochemical, and electrical properties

5. 1. Nguyen T. , Nguyen S. and Dobuzinsky D. , Proceeding of Electrochem. Soc. Fall 1990 Meeting, Seatlle, Washington; Abstract # 318, pp. 462–463.

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