Author:
Smith Henry I.,Thompson C.V.,Geis M.W.,Atwater H.,Yonehara T.,Wong C.C.
Abstract
ABSTRACTZone melting recrystallization (ZMR) of Si films on SiO2 has produced large-area films with electrical properties approaching those of bulk wafers. The mechanisms of film formation and the use of patterning to control orientation and defect distribution are briefly reviewed. Some examples of the use of patterning are: single-grain films have been produced by means of planar constrictions; subboundaries and impurities have been entrained to lie along straight lines separated by ∼100μm through the use of lithographically defined grating patterns; a vertical-constriction technique has enabled (100) texture to be achieved in 50μm-thick Si films; a lithographically-defined orientation filter, which takes advantage of growth-velocity anisotropy, has been used to select a predetermined azimuthal orientation.Patterning is also fundamental to graphoepitaxy. Current research emphasizes low temperature processes based on solid-state surface-energy-driven secondary grain growth.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献