Author:
Feldman R.D.,Austin R.F.,Cesar C.L.,Islam M.N.,Soccolich C.E.,Kim Y.,Ourmazd A.
Abstract
ABSTRACTWe have grown HgCdTe/CdTe multiple quantum wells by molecular beam epitaxy which show room temperature photoluminescence and sharp absorption steps at mid-infrared wavelengths. Quantitative chemical mapping, performed by transmission electron microscopy, indicates minimal interdiffusion during growth. Annealing experiments performed at higher temperatures show that the interdiffusion coefficient is a strong function of the depth of the interface below the surface. Absorption spectra have been accurately modeled with a square well/envelope function approach. The films have been used to passively mode lock color center lasers and produce pulses as short as 120 fsec near 2.7 μm.
Publisher
Springer Science and Business Media LLC