Author:
Claflin B.,Binger M.,Lucovsky G.
Abstract
ABSTRACTThe chemical stability of the compound metals TiNx and WNx on SiO2 and SiO2/Si3N4 (ON) dielectric stacks is studied by on-line Auger electron spectroscopy (AES) following sequential rapid thermal annealing treatments of 15 - 180 s up to 850 °C. The TiNx/SiO2 interface reacts at 850 °C and the reaction is kinetics driven. The TiNx/Si3N4 interface is more stable than TiNx/SiO2 even after a 180 s anneal at 850 °C. WNx is stable below 650 °C both on SiO2 and Si3N4, but above this temperature the film changes, possibly due to crystallization or interdiffusion. The changes in the WNx film are not controlled by kinetics. The compound metals are chemically more stable at elevated temperatures than pure Ti or W on SiO2.
Publisher
Springer Science and Business Media LLC
Reference8 articles.
1. 2 Claflin B. , Lucovsky G. , presented at PCSI-25, Salt Lake City, UT, Jan. 1998, submitted to J. Vac. Sci. Technol. B (1998).
2. 1 Claflin B. , Binger M. , Lucovsky G. , J. Vac. Sci. Technol. A, May/June A (1998) in press.
3. Reactions of Zr thin films with SiO2 substrates
4. Reaction of thin metal films with SiO2 substrates
5. Problems of quantitative Auger analysis of TiNx thin films: Peak overlapping and line shape changes
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献