Author:
Isozumi S.,Tanahashi T.,Kondo M.,Sugawara M.,Yamaguchi A.,Nakajima K.
Abstract
ABSTRACTFe-doped semi-insul ati ng layers of InP, In0.48A10.52As,and In0.49Ga0.51P have been grown by liquid phase epitaxy for the first time. Behaviors of Fe doping in these materials have been well explained by the solubility of Fe in the growth solution and the temperature dependent distribution coefficients of Fe. It has been found that the distribution coefficients of Fe in the ternary alloys are much greater than those in InP.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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