Study of SiF4-N2-H2 Plasmas for the Deposition of Fluorinated Silicon Nitride Films-Reference-Cited by-同舟云学术

Study of SiF4-N2-H2 Plasmas for the Deposition of Fluorinated Silicon Nitride Films

Published:1992 Issue: Volume:284 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Cicala G.,Bruno G.,Capezzuto P.,Losurdo M.

Abstract

ABSTRACTRadiofrequency glow discharges, operating under various conditions, have been used to deposit hydrogenated and fluorinated silicon nitride (a-Si,N:H,F) from SiF4-N2-H2 gas mixtures. The effect of the feeding mixture composition has been investigated in order to establish the optimum deposition conditions for stable silicon nitride. High H2-dilution of the feeding mixture has been found to produce transparent (Eg>5.6eV) and stoichiometric (N/Si=1.3) films.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference16 articles.

1. Plasma-Enhanced Chemical Vapor Deposition of Fluorinated Silicon Nitride

2. X‐ray photoelectron and Auger electron spectroscopy studies of photochemical vapor deposition silicon nitrides

3. 16. Cicala G. , Bruno G. , Capezzuto P. and Losurdo M. , Plasma Source Science Technol. 00, 00 (1992).

4. The Redistribution of Gold during the Growth of an Oxide or of Phosphosilicate Glass on Contaminated Silicon Wafers

5. Electrical properties of silicon nitride films plasma‐deposited from SiF4, N2, and H2 source gases

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