Plasma-Enhanced Chemical Vapor Deposition of Fluorinated Silicon Nitride
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 33 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si3N4and SiO2;Journal of Physics: Condensed Matter;2016-02-12
2. Interlevel Dielectrics;Handbook of Semiconductor Interconnection Technology, Second Edition;2006-02-22
3. Role of hydrogen on the deposition and properties of fluorinated silicon-nitride films prepared by inductively coupled plasma enhanced chemical vapor deposition using SiF4∕N2∕H2 mixtures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2005-03
4. Composition, structural, and electrical properties of fluorinated silicon–nitride thin films grown by remote plasma-enhanced chemical-vapor deposition from SiF[sub 4]/NH[sub 3] mixtures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004
5. Laser-assisted plasma-enhanced chemical vapor deposition of silicon nitride thin film;Surface and Coatings Technology;2000-10
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