Properties of CAT-CVD Silicon Nitride Films and Their Application as Passivation Films

Author:

Okada Shinya,Matsumura Hideki

Abstract

AbstractSilicon nitride (SiNx) films have been successfully synthesized by the catalytic chemical vapor deposition (cat-CVD) method using a gaseous mixture of silane (SiH4) and ammonia (NH3). In the method, the deposition gases are decomposed by catalytic cracking reactions with a high temperature (1700°C) catalyzer near the substrates, and SiNx films can be deposited at substrate temperatures lower than 400°C without using plasma or photochemical excitation. Nearly stoichiometric Si3N4 films are formed when the flow ratio of NH3 exceeds over 100 times of that of SiH4. These cat-CVD SiNx films show excellent properties. That is, the resistivity, the breakdown voltage, the chemical etch resistance and hydrogen content in the films are almost equivalent to those of high-temperature thermal CVD films. In addition, the surface diffusion length of depositing species is about several-tens μπι and step-coverage itself is conformai. Thus, the cat-CVD SiNx films are regarded not only as a new device passivation films superior to the conventional plasma-CVD films but as a gate insulator for electon devices due to their high quality.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3