Contactless Measurements of the Surface Recombination Velocity of P—N and High—Low (P—P+, N—N+) Junctions Fabricated by Rapid Thermal Processing

Abstract

ABSTRACTA photoconductive decay curve is analyzed theoretically to determine the surface recombination velocity and the bulk lifetime separately. And it can be applied to experimental photoconductive decay curves using the reflectance microwave probe method. Then it is verified numerically and experimentally to lower the effective surface recombination velocity at p—n and high—low junctions. The high—low junctions used in this study were fabricated from the ionimplanted wafer by rapid thermal annealing or furnace annealing. Then it is shown that the measurement system in relation to surface recombination can apply to evaluations in the ion implantation and its annealing process.