Author:
Rouhi Nima,Esfandyarpour Behzad,Mohajerzadeh Shams,Hashemi Pouya,Hekmat-Shoar Bahman,Robertson Michael D.
Abstract
AbstractWe report a low temperature high quality oxide growth of nano-structured silicon thin films on silicon substrates obtained through a hydrogenation-assisted PECVD technique followed by a plasma enhanced oxidation process. The deposited layers were investigated and compared with respect to their electrical, optical and stoichiometrical properties by means of Ellipsometry, Rutherford backscattering (RBS), Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, and by current voltage and capacitance voltage measurements on metal-oxide-semiconductor (MOS) structures.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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