Spin Density in Thin Film Silicon Before and After Electron Bombardment-Reference-Cited by-同舟云学术

Spin Density in Thin Film Silicon Before and After Electron Bombardment

Published:2007 Issue: Volume:989 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Astakhov Oleksandr,Carius Reinhard,Petrusenko Yuri,Borysenko Valeriy,Barankov Dmitry,Finger Friedhelm

Abstract

AbstractThe defect density in thin film silicon was increased using low temperature 2MeV electron irradiation up to a factor of 1000. More than 30 samples of different structure from highly crystalline to amorphous were prepared with PECVD and irradiated to study the dynamics of defect accumulation and role of the material structure in this process.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference23 articles.

1. Structural properties of microcrystalline silicon in the transition from highly crystalline to amorphous growth

2. Generation mechanisms of paramagnetic centers by gamma‐ray irradiation at and near the Si/SiO2interface

3. Electron beam creation of metastable defects in hydrogenated amorphous silicon: hydrogen collision model

4. Transport and electrically detected electron spin resonance of microcrystalline silicon before and after electron irradiation

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