X-ray topography and EBIC studies of misfit dislocations in strained layer structures

Abstract

ABSTRACTX-ray topography(XRT) and EBIC have been used to study the generation of misfit dislocations in strained layer structures. Two structures studied were GaAs1−yPy(y=0.15) film and SLS consisting of InxGa1−xAs(x=0.08) and GaAs1−y Py(y=0.16) layers. XRT and EBIC techniques gave consistent results for the behavior of dislocations. The value of the critical thickness for generation of misfit dislocations in the former was found to be few times larger than that in the latter. EBIC image showed that a SLS lattice matched to the substrate is effective in reducing defects originating from the substrate.