Ultrathin Single Crystal CoSi2 Layers on Si(111) and Si(100)-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Ultrathin Single Crystal CoSi2 Layers on Si(111) and Si(100)

Published:1987 Issue: Volume:102 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Tung R. T.,Batstone J. L.,Yalisove S. M.

Abstract

ABSTRACTThe growth of ultrathin epitaxial CoSi2 layers on Si by molecular beam epitaxy has been studied. This paper briefly outlines recent progress in the growth on Si(111) substrates. New results on the growth of epitaxial CoSi2 on Si(100) are also presented.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference19 articles.

1. The Effect of Surface Structure on the Epitaxial Growth of Si on CoSi2(111)

2. GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURES

3. 7. Levi A. F. J. , private communication.

4. 8. Levi A. F. J. , Tung R. T. , Batstone J. L. and Anzlowar M. , these proceedings.

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfaces;Materials Science and Technology;2013-02-15

2. Hetero-epitaxial growth of CoSi2 thin films on Si(100):;Journal of Crystal Growth;1998-07

3. Self-aligned cobalt disilicide/silicon Schottky barrier contacts: fabrication, materials and electrical characterization;Semiconductor Science and Technology;1996-07-01

4. Thin Films of CoSi2 Co-Deposited onto Si1-xGexAlloys;MRS Proceedings;1996

5. One micrometre scale self-aligned cobalt disilicide Schottky barrier diodes;Electronics Letters;1995-10-12

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP