Surface Cleaning and Passivation for the Growth of Si/Oxide/Si Structures

Abstract

ABSTRACTThis paper presents the results of surface cleaning and passivation of Si and oxide surfaces for the growth of Si/oxide/Si structures. Silicon surfaces are cleaned by the spin—etch process prior to the growth of silicon oxide. A silicon layer is then deposited after subsequent surface cleaning and chemical treatment on the surface of oxide/Si. Both the oxide and the silicon layers are grown in a plasma enhanced chemical vapor deposition system. The interface structure between layers of deposited Si/oxide/Si are observed by cross—section transmission electron microscopy (XTEM).