Raman Scattering Study of Interface Reactions of Co/SiGe-Reference-Cited by-同舟云学术

Raman Scattering Study of Interface Reactions of Co/SiGe

Published:1993 Issue: Volume:320 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Ying Hong,Wang Zhihai,Aldrich D. B.,Sayers D. E.,Nemanich R. J.

Abstract

ABSTRACTRaman scattering measurements are used to characterize Co/Si, Co/Ge and CO/Si0.8Ge0.2 thin film reactions. For Co/Si samples, the phase transitions Co--CoSi--CoSi2 are identified by Raman spectroscopy. For Co/Ge samples, Raman features associated with Co5Ge 7 and CoGe2 phases were observed. For CO/Si0.8Ge0.2 samples, only CoSi was identified along with Ge enriched SiGe alloy peaks. No features associated with CoGe or Co(SiGe) were found.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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1. Growth of epitaxial CoSi2 on SiGe(001);Journal of Applied Physics;1999-08

2. Film thickness effects in the Co–Si1−xGex solid phase reaction;Journal of Applied Physics;1998-10-15

3. Thickness Effects in the Reaction of Cobalt with Slicon-Germanium Alloys;MRS Proceedings;1998

4. Thin Films of CoSi2 Co-Deposited onto Si1-xGexAlloys;MRS Proceedings;1996