Author:
Shy Y. -T.,Murarka S. P.,Sitaram A. R.,Ding P.-J.,Lanford W. A.
Abstract
ABSTRACTCopper is being investigated for application as multi-level interconnection metal in silicon ultra-large-scale integration (ULSI). On the other hand, COSi2 is being tested for application as contacts in sub-half micron ULSI circuits. Copper will thus be used on COSi2 to bring the electrical connection to the outside world. In this investigation we have therefore studied the interactions of copper with CoSi2 employing sheet resistance measurements (four-point probe), Rutherford back scattering (RBS), and X-ray diffraction (XRD). In addition the stability of the Schottky diodes, n-Si/CoS2/Cu, has been investigated as a function of the heat treatment in the range of room temperature to 600° C in argon-3% hydrogen mixture gas ambient. Both the measurements of the analytical and electrical characteristics show that Cu on n-Si/CoSi2 is stable at least up to a 30 minutes anneal at 600°C in argon-3% hydrogen medium. These results will be presented and discussed.
Publisher
Springer Science and Business Media LLC
Cited by
3 articles.
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