Interactions and Stability of Cu on CoSi2

Author:

Shy Y. -T.,Murarka S. P.,Sitaram A. R.,Ding P.-J.,Lanford W. A.

Abstract

ABSTRACTCopper is being investigated for application as multi-level interconnection metal in silicon ultra-large-scale integration (ULSI). On the other hand, COSi2 is being tested for application as contacts in sub-half micron ULSI circuits. Copper will thus be used on COSi2 to bring the electrical connection to the outside world. In this investigation we have therefore studied the interactions of copper with CoSi2 employing sheet resistance measurements (four-point probe), Rutherford back scattering (RBS), and X-ray diffraction (XRD). In addition the stability of the Schottky diodes, n-Si/CoS2/Cu, has been investigated as a function of the heat treatment in the range of room temperature to 600° C in argon-3% hydrogen mixture gas ambient. Both the measurements of the analytical and electrical characteristics show that Cu on n-Si/CoSi2 is stable at least up to a 30 minutes anneal at 600°C in argon-3% hydrogen medium. These results will be presented and discussed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Copper metallization for ULSL and beyond;Critical Reviews in Solid State and Materials Sciences;1995-01

2. Advanced multilayer metallization schemes with copper as interconnection metal;Thin Solid Films;1993-12

3. Applications of CoSi2 to VLSI and ULSI;MRS Proceedings;1993

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