Photoluminescence mapping of laser-damaged β-Ga2O3-Reference-Cited by-同舟云学术

Photoluminescence mapping of laser-damaged β-Ga2O3

Published:2024-05-13 Issue:3 Volume:14 Page:427-431
ISSN:2159-6867
Container-title:MRS Communications
language:en
Short-container-title:MRS Communications

Author:

Huso Jesse^ORCID,McCluskey Matthew D.^ORCID,McCloy John S.^ORCID,Bhattacharyya Arkka^ORCID,Krishnamoorthy Sriram^ORCID,Frye Clint D.^ORCID,Varley Joel B.^ORCID,Voss Lars F.^ORCID

Funder

Basic Energy Sciences

Lawrence Livermore National Laboratory

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1557/s43579-024-00564-1.pdf

Reference26 articles.

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3. C. Remple, J. Huso, M.H. Weber, J.S. McCloy, and M.D. McCluskey, Electron irradiation effects on the optical properties of Hf and Zn doped β-Ga2O3. J. Appl. Phys. (in press). https://doi.org/10.1063/5.0196824

4. M. Peres, D.M. Esteves, B.M.S. Teixeira, J. Zanoni, L.C. Alves, E. Alves, L.F. Santos, X. Biquard, Z. Jia, W. Mu, J. Rodrigues, N.A. Sobolev, M.R. Correia, T. Monteiro, N. Ben Sedrine, K. Lorenz, Enhancing the luminescence yield of Cr3+ in β-Ga2O3 by proton irradiation. Appl. Phys. Lett. 120, 261904 (2022)

5. R.M.F. Pourhashemi, M.T. Hardy, P.S. Hsu, K.M. Kelchner, J.S. Speck, S.P. DenBaars, S. Nakamura, Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar GaN substrates. Appl. Phys. Lett. 103, 151112 (2013)